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AP2306AGN Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP2306AGN Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
2 / 4 page Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 30 mΩ VGS=4.5V, ID=5A - - 35 mΩ VGS=2.5V, ID=2.6A - - 50 mΩ VGS=1.8V, ID=1.0A - - 90 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance VDS=5V, ID=5A - 13 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=24V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 2 ID=5A - 8.5 15 nC Qgs Gate-Source Charge VDS=16V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.2 - nC td(on) Turn-on Delay Time 2 VDS=15V - 6 - ns tr Rise Time ID=5A - 20 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 20 - ns tf Fall Time RD=3Ω -3 - ns Ciss Input Capacitance VGS=0V - 660 1050 pF Coss Output Capacitance VDS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time 2 IS=5A, VGS=0V, - 14 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. AP2306AGN ± 12V ±100 |
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