Advance Product Information

August 27, 2003

3

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice

TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

TABLE III

ON-WAFER RF PROBE CHARACTERISTICS

°C, Nominal)

Limit

Symbol

Parameter

Test Condition

Min

Typ

Max

Units

Gain

Small Signal

Gain

F = 33 – 36 GHz

F = 34 – 35.2 GHz

16

17

---

---

dB

IRL

Input Return

Loss

F = 33 – 36 GHz

---

-8

---

dB

ORL

Output Return

Loss

F = 33 – 36 GHz

---

-6.5

---

dB

PWR

Output Power @

F = 34 – 34.6 Hz

F = 35.2 GHz

32

31.5

---

---

dBm

Peak LS Drain

Current @

F = 34 – 35.2 GHz

---

1.6

A

TABLE IV

THERMAL INFORMATION

Parameter

Test Conditions

(

(

°C/W)

(HRS)

Resistance

(channel to backside of

carrier)

Vd = 6 V

Id = 880 mA

Pdiss = 5.3 W

115

8.5

2.6 E+7

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo

Carrier at 70

DC power is dissipated.

TGA1141-EPU