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TGA2509 Datasheet(PDF) 1 Page - TriQuint Semiconductor |
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TGA2509 Datasheet(HTML) 1 Page - TriQuint Semiconductor |
1 / 7 page Advance Product Information February 1, 2006 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Wideband 1 W HPA with AGC TGA2509 Key Features • Frequency Range: 2-22 GHz • 30 dBm Nominal Psat (2-16 GHz) • >29 dBm Nominal Psat (2-20 GHz) • >28.5 dBm Output P1dB • 17 dB Nominal Gain • > 25 dB AGC Range • 0.25 um 3MI pHEMT Technology • Nominal Bias 12 V @ 1.1 A • Chip Dimensions: 2.30 x 3.20 x 0.10 mm (0.091 x 0.126 x 0.004 in) Measured Fixtured Data Bias Conditions: Vd =12 V, Id= 1.1 A Primary Applications • Wideband Gain Block • Military EW and ECM • Test Equipment -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 0369 12 15 18 21 24 27 30 Frequency (GHz) -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 Gain Input Output Product Description The TriQuint TGA2509 is a compact Wideband High Power Amplifier with AGC. The HPA operates from 2-22 GHz and is designed using TriQuint’s proven standard 0.25 um gate pHEMT production process. The TGA2509 provides >28.5 dBm of output power at 1 dB gain compression with small signal gain of 17 dB. Typical saturated power is 30 dBm from 2-16 GHz. The TGA2509 is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures,decoys, jammers and phased array systems. The TGA2509 is 100% DC and RF tested on-wafer to ensure performance compliance. Lead-free and RoHS compliant 20 22 24 26 28 30 32 34 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) Psat P1dB Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. |
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