Advance Product Information

Aug 16, 2005

3

TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

TABLE III

THERMAL INFORMATION

Parameter

Test Conditions

(

(

qC/W)

(HRS)

Resistance

(channel to backside

of package)

Vd = 8 V

Pdiss = 6 W

143

12.2

1.2E+9

Note: Package backside SnPb soldered to carrier at 70

°C baseplate temperature.

At saturated output power, the DC power consumption is 13.2W with 5.6W RF

power delivered to the load and 7.6W dissipated.

TABLE II

RF CHARACTERIZATION TABLE

qC, Nominal)

(Vd = 8 V, Idq = 0.75 A)

SYMBOL

PARAMETER

TEST

CONDITION

TYPICAL

UNITS

Gain

Small Signal Gain

f = 3.5 GHz

11

dB

IRL

Input Return Loss

f = 3.5 GHz

10

dB

ORL

Output Return Loss

f = 3.5 GHz

8

dB

Psat

Saturated Output Power

37.5

dBm

TGA2925-SG