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BTN1053L3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTN1053L3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 5 page  CYStech Electronics Corp. Spec. No. : C818L3 Issued Date : 2003.08.13 Revised Date : Page No. : 1/5 BTN1053L3 CYStek Product Specification NPN Epitaxial Planar Transistor BTN1053L3 Features • 5W power dissipation • Excellent HFE Characteristics up to 1A • Low Saturation Voltage VCE(sat)=0.15V(typ)(IC=1A,IB=50mA). • 5A peak pulse current Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 75 V Emitter-Base Voltage VEBO 5 V Collector Current(DC) IC 1.5 Collector Current(Pulsed) ICP 5 (Note) A Power Dissipation @TC=25℃ PD 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : Single pulse, Pw≤300µs, Duty Cycle≤2%. |
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