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SRF30150C Datasheet(PDF) 1 Page - Mospec Semiconductor |
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SRF30150C Datasheet(HTML) 1 Page - Mospec Semiconductor |
1 / 2 page MOSPEC SRF30150C Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 150℃ Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction. * Plastic Material used Carries Underwriters Laboratory MAXIMUM RATINGS Characteristic Symbol SRF30150C Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 150 V RMS Reverse Voltage VR(RMS) 105 V Average Rectifier Forward Current Total Device (Rated VR),TC=100℃ IF(AV) 15 30 A Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) IFM 30 A Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM 200 A Operating and Storage Junction Temperature Range TJ , TSTG -65 to +150 ℃ ELECTRIAL CHARACTERISTICS Characteristic Symbol SRF30150C Unit Maximum Instantaneous Forward Voltage ( IF =15 Amp TC = 25℃) ( IF =15 Amp TC = 125℃) VF 0.95 0.85 V Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 125℃) IR 0.5 30 mA SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 150 VOLTS ITO-220AB MILLIMETERS DIM MIN MAX A 15.05 15.15 B 13.35 13.45 C 10.00 10.10 D 6.55 6.65 E 2.65 2.75 F 1.55 1.65 G 1.15 1.25 H 0.55 0.65 I 2.50 2.60 J 3.00 3.20 K 1.10 1.20 L 0.55 0.65 M 4.40 4.60 N 1.15 1.25 P 2.65 2.75 O 3.35 3.45 Q 3.15 3.25 Common cathode Suffix “C” |
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