GENNUM CORPORATION

22213 - 2

4 of 8

2. ELECTRICAL CHARACTERISTICS

2.1 ABSOLUTE MAXIMUM RATINGS

PARAMETER

VALUE

Supply Voltage

Input ESD Voltage

500V

Storage Temperature Range

Input Voltage Range (any input)

Operating Temperature Range

0°C to 70°C

Power Dissipation

300mW

Lead Temperature (soldering, 10 sec)

260°C

2.2 DC ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

CONDITIONS

MIN

TYPICAL

MAX

UNITS

TEST

LEVEL

Supply Voltage

3.1

3.3

3.5

V

3

Power

Consumption

-160

-

mW

5

Supply Current

Ι

s

-48-

mA

1

Output Voltage

Common mode

-

-mV

6

Input Voltage

Common mode

1.6 +

∆V

-

mV

1

2.3 AC ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

CONDITIONS

MIN

TYPCAL

MAX

UNITS

TEST

LEVEL

Serial input data rate

-

-

540

Mb/s

1

Input Voltage Swing

∆V

SDI(DIFF)

Differential

300

-

2000

1

Output Voltage Swing

∆V

SDO(SE)

Single Ended into 75

Ω external

load

750

800

850

1

Additive jitter

--

30

ps

1

Rise/Fall time

20% - 80%

400

-

800

ps

1

Mismatch in rise/fall time

∆t

--

30

ps

1

Duty cycle distortion

-

-

100

ps

1

Overshoot

--

8

%

1

Output Return Loss

ORL

15

-

-

dB

7

TEST LEVELS

1. Production test at room temperature and nominal supply voltage with

guardbands for supply and temperature ranges.

2. Production test at room temperature and nominal supply voltage with

guardbands for supply and temperature ranges using correlated test.

3. Production test at room temperature and nominal supply voltage.

4. QA sample test.

5. Calculated result based on Level 1, 2, or 3.

6. Not tested. Guaranteed by design simulations.

7. Not tested. Based on characterization of nominal parts.

8. Not tested. Based on existing design/characterization data of similar

product.

9. Indirect test.

10. Wafer Probe

CAUTION

The GS9068 is sensitive to electrostatic discharge. Use

extreme caution, observing all ESD-prevention practices,

during handling and assembly. The SDI inputs of the GS9068

must be protected from electrostatic discharge and electrical

overstress during the handling and operation of circuit

assemblies containing the device.