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CM1215-02ST Datasheet(PDF) 4 Page - California Micro Devices Corp |
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CM1215-02ST Datasheet(HTML) 4 Page - California Micro Devices Corp |
4 / 10 page © 2005 California Micro Devices Corp. All rights reserved. 4 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.calmicro.com 06/30/05 CM1215 PRELIMINARY Specifications (cont’d) Note 1: All parameters specified at TA = -40°C to +85°C unless otherwise noted. Note 2: These parameters guaranteed by design and characterization. Note 3: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 3.3V, VN grounded. Note 4: From I/O pins to VP or VN only. VP bypassed to VN with low ESR 0.2μF ceramic capacitor. ELECTRICAL OPERATING CHARACTERISTICS NOTE 1 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VP Operating Supply Voltage (VP-VN)3.3 5.5 V IP Operating Supply Current (VP-VN) = 3.3V 8 μA VF Diode Forward Voltage Top Diode Bottom Diode IF = 20mA; TA = 25°C 0.6 0.6 0.8 0.8 0.95 0.95 V V ILEAK Channel Leakage Current TA = 25°C; VP = 5V, VN = 0V ±0.1 ±1.0 μA CIN Channel Input Capacitance At 1 MHz, VP = 3.3V, VN = 0V, VIN = 1.65V; Note2 1.6 2.0 pF ΔCIN Channel I/O to GND Capacitance Difference Note 2 0.04 pF CMUTUAL Mutual Capacitance (VP-VN) = 3.3V; Note 2 0.13 pF VESD ESD Protection Peak Discharge Voltage at any channel input, in system, contact discharge per IEC 61000-4-2 standard Notes 2, 3, and 4; TA = 25°C ±15 kV VCL Channel Clamp Voltage Positive Transients Negative Transients IPP = 1A, tP = 8/20μS; TA=25°C; Notes 2 VP+1.5 VN-1.5 V V RDYN Dynamic Resistance Positive transients Negative transients IPP = 1A, tP = 8/20μS; TA = 25°C; Notes 2 0.4 0.4 Ω Ω |
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