CM1293-02SR datasheet(6/10 Pages) CALMIRCO

Part #	CM1293-02SR

Description	2, 4, and 8-Channel Low Capacitance ESD Protection Arrays

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Manufacturer	CALMIRCO [California Micro Devices Corp]

Direct Link	http://www.calmicro.com

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490 N. McCarthy Blvd., Milpitas, CA 95035-5112

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Tel: 408.263.3214

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Fax: 408.263.7846

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www.cmd.com 01/26/06

CM1293

Application Information

Design Considerations

In order to realize the maximum protection against

ESD pulses, care must be taken in the PCB layout to

minimize parasitic series inductances on the Supply/

Ground rails as well as the signal trace segment

between the signal input (typically a connector) and the

ESD protection device. Refer to Figure 3, which illus-

trates an example of a positive ESD pulse striking an

input channel. The parasitic series inductance back to

the power supply is represented by L1 and L2. The volt-

age VCL on the line being protected is:

VCL = Fwd voltage drop of D1 + VSUPPLY + L1 x d(IESD) / dt

+ L2 x d(IESD) / dt

where IESD is the ESD current pulse, and VSUPPLY is

the positive supply voltage.

An ESD current pulse can rise from zero to its peak

value in a very short time. As an example, a level 4

contact discharge per the IEC61000-4-2 standard

results in a current pulse that rises from zero to 30

Amps in 1ns. Here d(IESD)/dt can be approximated by

ΔIESD/Δt, or 30/(1x10-9). So just 10nH of series induc-

tance (L1 and L2 combined) will lead to a 300V incre-

ment in VCL!

Similarly for negative ESD pulses, parasitic series

inductance from the VN pin to the ground rail will lead

to drastically increased negative voltage on the line

being protected.

The CM1293 has an integrated Zener diode between

VP and VN. This greatly reduces the effect of supply rail

inductance L2 on VCL by clamping VP at the break-

down voltage of the Zener diode. However, for the low-

est possible VCL, especially when VP is biased at a

voltage significantly below the Zener breakdown volt-

age, it is recommended that a 0.22

μF ceramic chip

capacitor be connected between VP and the ground

plane.

As a general rule, the ESD Protection Array should be

located as close as possible to the point of entry of

expected electrostatic discharges. The power supply

bypass capacitor mentioned above should be as close

to the VP pin of the Protection Array as possible, with

minimum PCB trace lengths to the power supply,

ground planes and between the signal input and the

ESD device to minimize stray series inductance.

Additional Information

See also California Micro Devices Application Note

AP209, “Design Considerations for ESD Protection”, in

the Applications section at www.calmicro.com.

Figure 3. Application of Positive ESD Pulse between Input Channel and Ground

N

L 2

L1

VP

V

PATH OF ESD CURRENT PULSE I

ONE

CHANNEL

OF

CM1213

CHANNEL

INPUT

GROUND RAIL

CHASSIS GROUND

POSITIVE SUPPLY RAIL

SYSTEM OR

CIRCUITRY

BEING

PROTECTED

LINE BEING

PROTECTED

ESD

0.22

μF

D1

2

D

0A

25A

VCL

VCC

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CM1293-02SR Datasheet(PDF) 6 Page - California Micro Devices Corp

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