IRHSLNA57064

www.irf.com

3

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-

tions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHSLNA57064, IRHSLNA53064 and IRHSLNA54064

2. Part number IRHSLNA58064

Fig a. Single Event Effect, Safe Operating Area

International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy

Range

V

DS

(V)

(MeV)

(µm)

@V

GS

=0V @V

GS

=-5V @V

GS

=-10V @V

GS

=-15V @V

GS

=-20V

Kr

39.2

300

37.4

60

60

60

52

34

Xe

63.3

300

29.2

46

46

35

25

15

Au

86.6

2068

106

35

35

27

20

14

0

10

20

30

40

50

60

70

0

-5

-10

-15

-20

VGS

Kr

Xe

Au

Parameter

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

60

—

60

—

V

Gate Threshold Voltage

2.0

4.0

1.5

4.0

Gate-to-Source Leakage Forward

—

100

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

—

-100

Zero Gate Voltage Drain Current

—

10

—

25

µA

Static Drain-to-Source

➁

—

6.1

—

7.1

m

Ω

On-State Resistance (TO-3)

Static Drain-to-Source

➁

—

6.1

—

7.1

m

Ω

On-State Resistance (SMD-2)

Diode Forward Voltage

➁

—

1.3

—

1.3

V

⑦

⑦