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SI3232-X-GQ Datasheet(PDF) 6 Page - Silicon Laboratories |
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SI3232-X-GQ Datasheet(HTML) 6 Page - Silicon Laboratories |
6 / 128 page Si3232 6 Preliminary Rev. 0.96 Table 3. Power Supply Characteristics1 (VDD, VDD1–VDD4 = 3.3 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade) Parameter Symbol Test Condition Min Typ Max Unit VDD1–VDD4 Supply Current (Si3232) IVDD1–IVDD4 Sleep mode, RESET = 0 — 1 — mA Open (high impedance) — 15 — mA Active on-hook standby — 15 — mA Forward/reverse active off-hook ABIAS = 4 mA — 20 — mA Forward/reverse active OHT OBIAS = 4 mA — 12 + ILIM — mA Ringing, VRING =45Vrms, VBAT = –70 V, Sine Wave, 1 REN load2 —28— mA VDD Supply Current (Si3200) IVDD Sleep mode, RESET = 0 — 100 — µA Open (high impedance) — 100 — µA Active on-hook standby — 110 — µA Forward/reverse active off-hook, ABIAS = 4 mA, VBAT =–24 V —110 — µA Forward/reverse OHT, OBIAS = 4 mA, VBAT =–70 V —110 — µA Ringing, VRING =45Vrms, VBAT = –70 V, Sine Wave, 7 REN load —110 — µA VBAT Supply Current (Si3200) IVBAT Sleep mode, RESET = 0, VBAT =–70 V — 100 — µA Open (high impedance), VBAT = –70 V — 225 — µA Active on-hook standby, VBAT = –70 V — 400 — µA Forward/reverse active off-hook, ABIAS = 4 mA, VBAT =–24 V — 4.4 + ILIM —mA Forward/reverse OHT, OBIAS = 4 mA, VBAT =–70 V —8.4 — mA Ringing, VRING =45Vrms, VBAT = –70 V, Sine wave, 1 REN load2 —6— mA Notes: 1. All specifications are for a single channel based on measurements with both channels in the same operating state. 2. See “4.7.4. Ringing Power Considerations” for current and power consumption under other operating conditions. 3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must include an additional VBAT x ILIM term. |
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