1

Edition 1.3

July 2004

FLD5F20NP-E

FEATURES

• Modulator Integrated DFB Laser Diode Module

• CW operation of DFB laser section

• Modulation voltage applied only to modulator section

• High speed butterfly package with GPO connection

• Built-in optical isolator, monitor photodiode, thermistor, and

thermo-electric cooler

• Available at C-Band ITU-T grid wavelengths between 1529.55nm

thru 1563.05nm

APPLICATION

This MI DFB laser is intended for long reach applications (

≤80km)

at 10Gb/s.

DESCRIPTION

The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator

monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation

voltage is applied to the modulator section while the laser section operates CW allowing extremely low

wavelength chirping. Extinction ratios of more than 10 dB can be achieved with 2.6 Vp-p modulation.

The MI laser is installed in a butterfly type package. The module incorporates a highly stable optical

coupling system. The module includes an optical isolator, monitor photodiode, thermistor and a

thermo-electric cooler.

Parameter

Symbol

Storage Temperature

Tstg

+85

-

-40

Operating Case Temperature

+70

-

Top

-20

Optical Output Power

5

CW

mW

Pf

-

Laser Forward Current

150

CW

mA

IF

-

Laser Reverse Voltage

2

CW

V

VR

-

Modulator Forward Voltage

+1

CW

V

Vm

-5

Photodiode Forward Current

1

-mA

--

10

-V

Photodiode Reverse Voltage

VDR

-

10

260

°C

sec

Lead Soldering Time

--

TEC Voltage

+2.5

Cooling

-

Heating

V

Vc

-

-2.5

TEC Current

+1.4

Cooling

-

Heating

A

Ic

-

-0.9

Thermistor Temperature

+70

-20

ATC Operation

°C

Tth

Rating

Unit

Min.

Max.

ABSOLUTE MAXIMUM RATINGS (Top=25°C, unless otherwise specified)

Condition

1,550nm Modulator

Integrated DFB Laser