BFR181TF

Document Number 85100

Rev. 1.3, 28-Apr-05

Vishay Semiconductors

www.vishay.com

1

2

1

3

Electrostatic sensitive device.

Observe precautions for handling.

16867

Silicon NPN Planar RF Transistor

Description

The main purpose of this bipolar transistor is broad-

band amplification up to 2 GHz. In the space-saving

3-pin surface-mount SOT-490 package electrical per-

formance and reliability are taken to a new level cov-

ering a smaller footprint on PC boards than previous

packages. In addition to space savings, the SOT-490

provides a higher level of reliability than other 3-pin

packages, such as more resistance to moisture. Due

to the short length of its leads the SOT-490 is also

reducing package inductances resulting in some bet-

ter electrical performance. All of these aspects make

this device an ideal choice for demanding RF applica-

tions.

Features

• Small feedback capacitance

• Low noise figure

• High power gain

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

For low noise and high gain broadband amplifiers at

collector currents from 0.5 mA to 12 mA.

Mechanical Data

Typ: BFR181TF

Case: SOT-490 Plastic case

Weight: approx. 2.5 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Parts Table

Absolute Maximum Ratings

Part

Marking

Package

BFR181TF

RF

SOT-490

Parameter

Test condition

Symbol

Value

Unit

Collector-base voltage

15

V

Collector-emitter voltage

10

V

Emitter-base voltage

2V

Collector current

20

mA

Base current

2mA

Total power dissipation

160

mW

Junction temperature

150

°C

Storage temperature range

- 65 to + 150

°C

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