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ACS1086SA-TR Datasheet(PDF) 2 Page - STMicroelectronics |
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ACS1086SA-TR Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 11 page 1 Characteristics ACS108-6S 2/11 1 Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C, unless otherwise specified) Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-92 Tlead = 75 °C 0.8 A SOT-223 Tamb = 75 °C TO-92 Tamb = 61 °C 0.45 ITSM Non repetitive surge peak on-state current (full cycle sine wave, Tj initial = 25 °C) f = 60 Hz t = 16.7 ms 7.6 A f = 50 Hz t = 20 ms 7.3 I²t I²t Value for fusing tp = 10 ms 0.38 A2s dI/dt Critical rate of rise of on-state current IG = 2xIGT, tr ≤ 100 ns f = 120 Hz Tj = 125 °C 100 A/µs VPP Non repetitive line peak mains voltage(1) 1. according to test described by IEC 61000-4-5 standard and Figure 16 Tj = 25 °C 2kV IGM Peak gate current tp = 20 µs Tj = 125 °C 1A VGM Peak positive gate voltage Tj = 125 °C 10 V PG(AV) Average gate power dissipation Tj = 125 °C 0.1 W Tstg Tj Storage junction temperature range Operating junction temperature range -40 to +150 -30 to +125 °C Symbol Test conditions Quadrant Value Unit IGT (1) 1. minimum IGT is guaranteed at 10% of IGT max VOUT = 12 V, RL = 33 Ω II - III MAX 10 mA VGT II - III MAX 1 V VGD VOUT = VDRM, RL =3.3 kΩ, Tj = 125 °C II - III MIN 0.15 V IH (2) IOUT = 100 mA MAX 25 mA IL (2) IG = 1.2 x IGT MAX 30 mA dV/dt (2) 2. for both polarities of OUT referenced to COM VOUT = 67% VDRM, gate open, Tj = 125 °C MIN 500 V/µs (dI/dt)c (2) Without snubber (15 V/µs), turn-off time ≤ 20 ms, Tj = 125 °C MIN 0.3 A/ms VCL ICL = 0.1 mA, tp = 1 ms, Tj = 125 °C MIN 650 V |
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