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ACS1086SN-AP Datasheet(PDF) 4 Page - STMicroelectronics |
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ACS1086SN-AP Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 11 page 1 Characteristics ACS108-6S 4/11 Figure 3. Relative variation of junction to ambient thermal impedance vs pulse duration and package Figure 4. Relative variation of gate trigger current, holding current and latching current vs junction temperature Figure 5. Non repetitive surge peak on-state current vs number of cycles . Figure 6. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t (Tj initial = 25 °C). 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 K=[Z th(j-a)/Rth(j-a)] TO-92 t (S) P SOT-223 I GT,IH,IL [Tj]/IGT,IH,IL [Tj=25°C] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Tj(°C) I L & IH I GT 0 1 2 3 4 5 6 7 8 9 10 1 10 100 1000 Number of cycles ITSM(A) Non repetitive Tj initial = 25 °C Repetitive T amb = 75 °C One cycle t=20ms 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0.01 0.10 1.00 10.00 I TSM(A), I²t (A²s) Tj initial=25°C I TSM I²t (ms) tp |
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