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ST2304 Datasheet(PDF) 1 Page - Stanson Technology |
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ST2304 Datasheet(HTML) 1 Page - Stanson Technology |
1 / 6 page N Channel Enchancement Mode MOSFET ST2304 2.5A DESCRIPTION The ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain S: Subcontractor Y: Year Code W: Process Code Page 1 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 FEATURE 30V/2.5A, RDS(ON) = 70m-ohm @VGS = 10V 30V/2.0A, RDS(ON) = 105m-ohm @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 1 2 D G S 3 1 2 S04YA |
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