ST3413 datasheet(3/7 Pages) STANSON

Part #	ST3413

Description	P Channel Enhancement Mode MOSFET

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Manufacturer	STANSON [Stanson Technology]

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P Channel Enhancement Mode MOSFET

ST3413

-3.4A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS VGS=0V,ID=-250uA

-20

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA -0.35

-0.8

V

Gate Leakage Current

IGSS

VDS=0V,VGS=+/-12V

100

nA

VDS=-20V,VGS=0V

-1

Zero Gate Voltage Drain Current

IDSS

VDS=-20V,VGS=0V

TJ=55℃

-5

uA

On-State Drain Current

ID(on)

VDS≦-5V,VGS=-4.5V -6.0

A

Drain-source On-Resistance

RDS(on)

VGS=-4.5V,ID=-2.8A

VGS=-2.5V,ID=-2.0A

VGS=-1.8V,ID=-1.5A

0.076

0.097

0.123

0.095

0.120

0.145

Ω

Forward Transconductance

gfs

VDS=-5V,ID=-2.8V

6

S

Diode Forward Voltage

VSD

IS=-1.6A,VGS=0V

-0.8

-1.2

V

Dynamic

Total Gate Charge

Qg

4.8

8

Gate-Source Charge

Qgs

1.0

Gate-Drain Charge

Qgd

VDS=-6V,VGS=-4.5V

ID≡-2.8A

1.0

nC

Input Capacitance

Ciss

485

Output Capacitance

Coss

85

Reverse Transfer Capacitance

Crss

VDS=-6V,VGS=0V

F=1MHz

40

pF

10

25

Turn-On Time

td(on)

tr

13

60

18

70

Turn-Off Time

td(off)

tf

VDD=-6V,RL=6Ω

ID=-1A,VGEN=-4.5V

RG=6Ω

15

60

nS

Page 3

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

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