K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM

PRELIMINARY

Rev 4.0

- 1 -

September 2001

Document Title

512Kx8 Bit High Speed Static RAM(5V Operating).

Operated at Extended and Industrial Temperature Ranges.

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

RevNo.

Rev. 0.0

Rev. 1.0

Rev. 2.0

Rev. 3.0

Rev.4.0

Remark

Preliminary

Preliminary

Preliminary

Final

Final

History

Initial release with Preliminary.

1.1 Removed Low power Version.

1.2 Removed Data Retention Characteristics.

2.1 Relax D.C parameters.

2.2 Relax Absolute Maximum Rating.

3.1 Delete Preliminary

3.2 Update D.C parameters and 10ns part.

3.3 Added Extended temperature range

Delete 20ns speed bin

Item

Previous

Current

12ns

170mA

195mA

15ns

165mA

190mA

20ns

160mA

185mA

Item

Previous

Current

Voltage on Any Pin Relative to Vss

-0.5 to 7.0

-0.5 to Vcc+0.5

Previous

Current

10ns

-

70mA

20mA

170mA

60mA

10mA

12ns

195mA

160mA

15ns

190mA

150mA

20ns

185mA

140mA

Draft Data

Feb. 12. 1999

Mar. 29. 1999

Aug. 19. 1999

Mar. 27. 2000

Sep. 24. 2001