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LM4952 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM4952 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 20 page  Absolute Maximum Ratings (Notes 1, 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (pin 6, referenced to GND, pins 4 and 5) 18.0V Storage Temperature −65˚C to +150˚C Input Voltage pins 4, 6, and 7 −0.3V to V DD + 0.3V pins 1, 2, 3, 8, and 9 −0.3V to 9.5V Power Dissipation (Note 3) Internally limited ESD Susceptibility (Note 4) 2000V ESD Susceptibility (Note 5) 200V Junction Temperature 150˚C Thermal Resistance θ JC (TS) 4˚C/W θ JA (TS) (Note 3) 20˚C/W Operating Ratings Temperature Range T MIN ≤ T A ≤ T MAX −40˚C ≤ T A ≤ 85˚C Supply Voltage 9.6V ≤ V DD ≤ 16V Electrical Characteristics V DD = 12V (Notes 1, 2) The following specifications apply for V DD = 12V, AV = 20dB (nominal), RL =4 Ω, and T A = 25˚C unless otherwise noted. Symbol Parameter Conditions LM4952 Units (Limits) Typical (Note 6) Limit (Notes 7, 8) I DD Quiescent Power Supply Current V IN = 0V, IO = 0A, No Load 18 35 mA (max) I SD Shutdown Current V SHUTDOWN = GND (Note 9) 55 85 µA (max) R IN Amplifier Input Resistance V DC VOL =VDD/2 44 k Ω V DC VOL = GND 200 k Ω V IN Amplifier Input Signal V DD/2 V p-p (max) V SDIH Shutdown Voltage Input High 2.0 V DD/2 V (min) V (max) V SDIL Shutdown Voltage Input Low 0.4 V (max) T WU Wake-up Time C B = 4.7µF 440 ms TSD Thermal Shutdown Temperature 170 ˚C P O Output Power f = 1kHz, THD+N = 1% THD+N = 10% 3.1 3.8 2.8 W (min) THD+N Total Harmomic Distortion + Noise P O = 2.0Wrms, f = 1kHz 0.08 % e OS Output Noise A-Weighted Filter, V IN = 0V, Input Referred 8µV X TALK Channel Separation f IN = 1kHz, PO = 1W, Input Referred R L =8 Ω R L =4 Ω 78 72 dB PSRR Power Supply Rejection Ratio V RIPPLE = 200mVp-p, f = 1kHz, Input Referred 89 80 dB (min) I OL Output Current Limit V IN = 0V, RL = 500m Ω 5A www.national.com 3 |
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