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SI4435DYPBF Datasheet(PDF) 2 Page - International Rectifier |
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SI4435DYPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  Si4435DYPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V trr Reverse Recovery Time ––– 34 51 ns TJ = 25°C, IF = -2.5A Qrr Reverse Recovery Charge ––– 33 50 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics A -50 -2.5 S D G Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 5sec. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.019 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.015 0.020 VGS = -10V, ID = -8.0A ––– 0.026 0.035 VGS = -4.5V, ID = -5.0A VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance ––– 11 ––– S VDS = -15V, ID = -8.0A ––– ––– -10 VDS = -24V, VGS = 0V ––– ––– -10 VDS = -15V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 40 60 ID = -4.6A Qgs Gate-to-Source Charge ––– 7.1 ––– nC VDS = -15V Qgd Gate-to-Drain ("Miller") Charge ––– 8.0 ––– VGS = -10V td(on) Turn-On Delay Time ––– 16 24 VDD = -15V, VGS = -10V tr Rise Time ––– 76 110 ID = -1.0A td(off) Turn-Off Delay Time ––– 130 200 RG = 6.0Ω tf Fall Time ––– 90 140 RD = 15Ω Ciss Input Capacitance ––– 2320 ––– VGS = 0V Coss Output Capacitance ––– 390 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0kHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns |
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