• 221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 520, REV. B
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
200
°C Operating Temperature
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
Soft Reverse Recovery at Low and High Temperature
•
Very Low Forward Voltage Drop
•
Low Power Loss, High Efficiency
•
High Surge Capacity
•
Guard Ring for Enhanced Durability and Long Term Reliability
•
Guaranteed Reverse Avalanche Characteristics
•
Electrically / Mechanically Stable during and after Packaging
•
Out Performs 100 Volt Ultrafast Rectifiers
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
100
V
Max. Average Forward
Current
IF(AV)
50% duty cycle, rectangular
wave form
15
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
(1)
280
A
Non-Repetitive Avalanche
Energy
EAS
TJ = 25 °C, IAS = 0.53 A,
L = 56 mH
8.0
mJ
Repetitive Avalanche Current
IAR
IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR
0.53
A
Max. Junction Temperature
TJ
-
-65 to +200
°C
Max. Storage Temperature
Tstg
-
-65 to +200
°C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 15A, Pulse, TJ = 25 °C
0.84
V
VF2
@ 15A, Pulse, TJ = 125 °C
0.68
V
Max. Reverse Current
IR1
@VR = 100V, Pulse,
TJ = 25 °C
350
µA
IR2
@VR = 100V, Pulse,
TJ = 125 °C
8
mA
Max. Junction Capacitance
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
500
pF
(1) in SHD package
SD125SC100A/B/C
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