4-113

TELCOM SEMICONDUCTOR, INC.

7

6

5

4

3

1

2

8

+85

Parameter

Test Conditions

Min

Typ

Max

Units

Supply Voltage Rejection

90

120

—

dB

Slew Rate

—

1

—

V/

µsec

V(EA+) = 1V to 3V Pulse, (Note 1)

—

—

—

Threshold Hysteresis

0.6

0.8

1

V

Total Standby Current

Supply Current

—

1.2

2.5

mA

Start-Up Current

—

250

350

µA

PWM Comparator

Min. Duty Cycle

—

0

%

Max Duty Cycle

45

49

—

%

Input Threshold

0.5

0.6

0.7

V

Input Threshold

3.4

3.6

3.7

V

Input Bias Current

—

±1

µA

Soft Start Section

Soft Start Current

30

46

75

µA

Soft Start Voltage

—

30

100

mV

Shutdown Input Current

—

±1

±100

nA

Min Shutdown Pulse Width

—

20

40

nsec

Shutdown Delay

130

140

220

nsec

Shutdown Threshold

1.5

2.4

3

V

Output Drivers (each output)

Output Low Level RDS (ON)

—

13

25

Ω

Output High Level RDS (ON)

—

20

35

Ω

Rise Time

—

55

80

nsec

Fall Time

—

40

65

nsec

Power Supply

Supply Current

—

2

3

mA

UV Lockout Threshold

6.45

7

7.3

V

UV Lockout Hysteresis

1.7

2.2

2.5

V

Start-up Current

—

75

200

µA

NOTE:

1. Not Tested.

TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums

and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use of

any circuits described herein and makes no representations that they are free from patent infringement.

BICMOS PWM CONTROLLERS

TC25C25

TC35C25