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SI7407DN Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7407DN Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si7407DN Vishay Siliconix New Product www.vishay.com 2 Document Number: 71912 S-22122—Rev. B, 25-Nov-02 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = -400 mA -0.40 -1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA VDS = -9.6 V, VGS = 0 V -1 m Zero Gate Voltage Drain Current IDSS VDS = -9.6 V, VGS = 0 V, TJ = 85_C -5 mA On-State Drain Currenta ID(on) VDS v -5 V, VGS = -4.5 V -30 A VGS = -4.5 V, ID = -15.6 A 0.009 0.012 Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -13.5 A 0.013 0.016 W DS(on) VGS = -1.8 V, ID = -5 A 0.019 0.024 Forward Transconductancea gfs VDS = -6 V, ID = -15.6 A 52 S Diode Forward Voltagea VSD IS = -3.2 A, VGS = 0 V -0.7 -1.2 V Dynamicb Total Gate Charge Qg 39 59 Gate-Source Charge Qgs VDS = -6 V, VGS = -4.5 V, ID = -15.6 A 6 nC Gate-Drain Charge Qgd 11 Turn-On Delay Time td(on) 30 45 Rise Time tr VDD = -6 V, RL = 6 W 50 75 Turn-Off Delay Time td(off) VDD = -6 V, RL = 6 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W 200 300 ns Fall Time tf 165 250 Source-Drain Reverse Recovery Time trr IF = -3.2 A, di/dt = 100 A/ms 60 90 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 5 10 15 20 25 30 0.0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20 25 30 01234 VGS = 5 thru 2 V 25 _C TC = 125_C 1 V -55 _C 1.5 V Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) |
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