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SDM4435 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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SDM4435 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page 30 P-Channel E nhancement Mode MOS FE T ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS 25 V Drain Current-Continuous @ TJ=125 C -Pulsed ID -8 -40 -1.7 2.5 A A A W IDM Drain-S ource Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and S torage Temperature R ange TJ, TS TG -55 to 150 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient R JA 50 /W C S DM4435 a a a a b 1 2 3 4 8 7 6 5 S S S G D D D D 5 1 J ul.27 2004 ver1.1 S amHop Microelectronics C orp. S urface Mount Package. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max -8A 20 @ V GS = -10V 35 @ V GS = -4.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S O-8 1 -30V |
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Similar Description - SDM4435 |
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