 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
STS8201 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
|
||||||||||||||||||||||||||||||
STS8201 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
|
|
1 / 8 page  20 Dual N-Channel E nhancement Mode Field E ffect Transistor S urface Mount Package. ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS 12 V ID 5 20 1.25 1.25 A A A W IDM Drain-S ource Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and S torage Temperature R ange TJ, TS TG -55 to 150 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient R JA 100 /W C a a a S amHop Microelectronics C orp. J an. 03 2006 1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( mW ) Max 20V 5A F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. 27 @ V GS = 4.0V 40 @ V GS = 2.5V S OT26 Top View S 1 D1/D2 S 2 G1 D1/D2 G2 1 2 3 6 5 4 Drain Current-Continuous @ TJ=25 C -Pulsed b S T S 8201 E S D Protected. G 1 D1 S 1 G 2 D2 S 2 |
Similar Part No. - STS8201 |
|
Similar Description - STS8201 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
