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IC42S16100-5TIG Datasheet(PDF) 7 Page - Integrated Circuit Solution Inc

Part # IC42S16100-5TIG
Description  512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
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Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IC42S16100-5TIG Datasheet(HTML) 7 Page - Integrated Circuit Solution Inc

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IC42S16100
Integrated Circuit Solution Inc.
7
DR024-0D 06/25/2004
AC CHARACTERISTICS(1,2,3)
-5
-6
-7
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max Units
tCK3
Clock Cycle Time
CAS Latency = 3
5
6
7
ns
tCK2
CAS Latency = 2
7
8
8.6
ns
tAC3
Access Time From CLK(4)
CAS Latency = 3
4.5
5.5
6
ns
tAC2
CAS Latency = 2
5
6
6
ns
tCHI
CLK HIGH Level Width
2
2
2.5
ns
tCL
CLK LOW Level Width
2
2
2.5
ns
tOH
Output Data Hold Time
2
2
2
ns
tLZ
Output LOW Impedance Time
0
0
0
ns
tHZ3
Output HIGH Impedance Time(5)
CAS Latency = 3
4.5
5.5
6
ns
tHZ2
CAS Latency = 2
5
6
6
ns
tDS
Input Data Setup Time
2
2
2
ns
tDH
Input Data Hold Time
1
1
1
ns
tAS
Address Setup Time
2
2
2
ns
tAH
Address Hold Time
1
1
1
ns
tCKS
CKE Setup Time
2
2
2
ns
tCKH
CKE Hold Time
1
1
1
ns
tCKA
CKE to CLK Recovery Delay Time
1CLK+3 —
1CLK+3 —
1CLK+3 —
ns
tCS
Command Setup Time (CS, RAS, CAS, WE, DQM)
2
2
2
ns
tCH
Command Hold Time (CS, RAS, CAS, WE, DQM)
1
1
1
ns
tRC
Command Period (REF to REF / ACT to ACT)
50
60
70
ns
tRAS
Command Period (ACT to PRE)
30 100,000
36 100,000
42 100,000 ns
tRP
Command Period (PRE to ACT)
15
18
21
ns
tRCD
Active Command To Read / Write Command Delay Time
15
18
21
ns
tRRD
Command Period (ACT [0] to ACT[1])
10
12
14
ns
tDPL
Input Data To Precharge
2CLK
2CLK
2CLK
ns
Command Delay time
tDAL
Input Data To Active / Refresh
2CLK+tRP
2CLK+tRP
2CLK+tRP —ns
Command Delay time (During Auto-Precharge)
tT
Transition Time
1
10
1
10
1
10
ns
tREF
Refresh Cycle Time (4096)
64
64
64
ms
Notes:
1. When power is first applied, memory operation should be started 100 µs after Vcc and VccQ reach their stipulated
voltages. Also note that the power-on sequence must be executed before starting memory operation.
2. Measured with tT = 1 ns.
3. The reference level is 1.4 V when measuring input signal timing. Rise and fall times are measured between VIH (min.) and
VIL (max.).
4. Access time is measured at 1.4V with the load shown in the figure below.
5. The time tHZ (max.) is defined as the time required for the output voltage to transition by ± 200 mV from VOH (min.) or VOL
(max.) when the output is in the high impedance state.


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