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K6R4008V1C-C Datasheet(HTML) 4 Page - Samsung semiconductor

Part No. K6R4008V1C-C
Description  512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K6R4008V1C-C Datasheet(HTML) 4 Page - Samsung semiconductor

   
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K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
CMOS SRAM
PRELIMINARY
Rev 5.0
- 4 -
September 2001
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70
°C)
*
The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width
≤ 8ns) for I ≤ 20mA.
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width
≤ 8ns) for I ≤ 20mA
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
3.0
3.3
3.6
V
Ground
VSS
0
0
0
V
Input High Voltage
VIH
2.0
-
VCC+0.3***
V
Input Low Voltage
VIL
-0.3**
-
0.8
V
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70
°C, Vcc=3.3±0.3V, unless otherwise specified)
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
ILI
VIN=VSS to VCC
-2
2
µA
Output Leakage Current
ILO
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2
2
µA
Operating Current
ICC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL, IOUT=0mA
Com.
10ns
-
155
mA
12ns
-
145
15ns
-
135
Ind.
10ns
-
170
12ns
-
160
15ns
-
150
Standby Current
ISB
Min. Cycle, CS=VIH
-
60
mA
ISB1
f=0MHz, CS
≥VCC-0.2V,
VIN
≥VCC-0.2V or VIN≤0.2V
Norrmal
-
10
L-Ver.
-
1.2
Output Low Voltage Level
VOL
IOL=8mA
-
0.4
V
Output High Voltage Level
VOH
IOH=-4mA
2.4
-
V
CAPACITANCE*(TA=25
°C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
CI/O
VI/O=0V
-
8
pF
Input Capacitance
CIN
VIN=0V
-
7
pF


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