Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

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▼ 100% Avalanche Test

250V

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▼ Simple Drive Requirement

68mΩ

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▼ Lower On-resistance

36A

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▼ RoHS Compliant

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

W/℃

Single Pulse Avalanche Energy

3

mJ

Avalanche Current

A

℃

℃

Symbol

Value

Units

Rthj-c

Thermal Resistance Junction-case

Max.

0.6

℃

/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

40

℃

/W

Data and specifications subject to change without notice

200916052-1/4

AP30N30W

Pb Free Plating Product

450

30

Parameter

Rating

Drain-Source Voltage

250

Gate-Source Voltage

±30

36

23

Pulsed Drain Current

1

144

Total Power Dissipation

208

-55 to 150

Operating Junction Temperature Range

-55 to 150

Linear Derating Factor

1.7

Thermal Data

Parameter

Storage Temperature Range

G

D

S

G

D

S

TO-3P

AP30N30 from APEC provide the designer with the best combination of fast

switching , low on-resistance and cost-effectiveness .

The TO-3P package is preferred for commercial & industrial applications

with higher power level preclusion than TO-220 device.