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AP630GP Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP630GP Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
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2 / 6 page  Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 200 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.248 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 400 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=5A - 40 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=200V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 oC) VDS=160V, VGS=0V - - 100 uA IGSS Gate-Source Forward Leakage VGS=- - nA Qg Total Gate Charge 3 ID= 9A - 25 - nC Qgs Gate-Source Charge VDS=160V - 3.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 14 - nC td(on) Turn-on Delay Time 3 VDD=100V - 8 - ns tr Rise Time ID= 9A - 26 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 34 - ns tf Fall Time RD=11Ω -22 - ns Ciss Input Capacitance VGS=0V - 515 - pF Coss Output Capacitance VDS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 9 A ISM Pulsed Source Current ( Body Diode ) 1 -- 36 A VSD Forward On Voltage 3 Tj=25℃, IS=9A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 oC , V DD=50V , L=4.5mH , RG=25Ω , IAS=9A. 3.Pulse width <300us , duty cycle <2%. AP630GP ± 30V ±100 |
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