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AP2451GY Datasheet(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP2451GY Datasheet(HTML) 3 Page - Advanced Power Electronics Corp. |
3 / 7 page AP2451GY P-CH Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - 0.01 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-4A - - 57 mΩ VGS=-4.5V, ID=-3A - - 75 mΩ VGS=-2.5V, ID=-1A - - 105 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1.2 V gfs Forward Transconductance VDS=-5V, ID=-3A - 10 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=-16V ,VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=±12V - - ±100 nA Qg Total Gate Charge 2 ID=-3A - 11 18 nC Qgs Gate-Source Charge VDS=-16V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 4 - nC td(on) Turn-on Delay Time 2 VDS=-10V - 10 - ns tr Rise Time ID=-1A - 16 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-5V - 26 - ns tf Fall Time RD=10Ω -16 - ns Ciss Input Capacitance VGS=0V - 740 1180 pF Coss Output Capacitance VDS=-20V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Rg Gate Resistance f=1.0MHz - 6.6 10 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage 2 IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=3A, VGS=0V, - 29 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 20 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board , t <5sec ; 155℃/W at steady state. |
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