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AP4501SSD Datasheet(PDF) 1 Page - Advanced Power Electronics Corp.

Part # AP4501SSD
Description  N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP4501SSD Datasheet(HTML) 1 Page - Advanced Power Electronics Corp.

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Advanced Power
N with Schottky AND P-CHANNEL
Electronics Corp.
ENHANCEMENT MODE POWER MOSFET
▼
▼
▼
▼ Simple Drive Requirement
N-CH BVDSS
30V
▼
▼
▼
▼ Low On-resistance
RDS(ON)
36mΩ
▼
▼
▼
▼ Fast Switching
ID
5.3A
P-CH
BVDSS
-30V
RDS(ON)
60mΩ
Description
ID
-4.2A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current
3
-4.2
A
ID@TA=70℃
Continuous Drain Current
3
-3.5
A
IDM
Pulsed Drain Current
1
-30
A
PD@TA=25℃
Total Power Dissipation
W
Linear Derating Factor
W/℃
TSTG
Storage Temperature Range
℃
TJ
Operating Junction Temperature Range
℃
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
62.5
℃/W
Data and specifications subject to change without notice
-55 to 125
0.016
-55 to 150
4.3
40
2
Parameter
200221031
AP4501SSD
Thermal Data
30
±20
5.3
The Advanced Power MOSFETs from APEC provide the
design with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
AP4501SSD included N , P channel enhancement mode
power MOSFET and Shottky diode.
D1
D1
D2
D2
S1/A
G1
S2
G2
PDIP-8
G2
D2
S2
G1
D1
S1
K
A


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