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AP4957GM Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

Part # AP4957GM
Description  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP4957GM Datasheet(HTML) 4 Page - Advanced Power Electronics Corp.

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Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP4957GM
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
12
0
10
203040
5060
Q G , Total Gate Charge (nC)
I D = - 7 A
V DS = - 24 V
100
1000
10000
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
10
20
30
40
02
468
-V GS , Gate-to-Source Voltage (V)
T j =150
o C
T j =25
o C
V DS =-5V


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