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AP6924GEY Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP6924GEY Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 4 page Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance SCHOTTKY DIODE Fig 1. Reverse Leakage Current Fig 2. Forward Voltage Drop v.s. Junction Temperature AP6924GEY 0.01 0.1 1 10 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) PDM Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=180 oC/W t T 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.02 0 4 8 12 0 0.5 1 1.5 2 2.5 3 Q G , Total Gate Charge (nC) V DS =10V V DS =12V V DS =16V I D =0.6A 10 100 13 57 9 11 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.1 1 0 0.2 0.4 0.6 0.8 V F , Forward Voltage Drop (V) T j =1 25 o CT j =25 o C 0.001 0.01 0.1 1 10 25 50 75 100 125 T j , Junction Temperature ( o C) 20V 16V |
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