AP6924GEY datasheet(4/4 Pages) A-POWER

Part #	AP6924GEY

Description	N-CHANNEL MOSFET WITH SCHOTTKY DIODE

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Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

SCHOTTKY DIODE

Fig 1. Reverse Leakage Current

Fig 2. Forward Voltage Drop

v.s. Junction Temperature

AP6924GEY

0.01

0.1

1

10

0.1

1

10

100

V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

100us

1ms

10ms

100ms

1s

DC

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

t , Pulse Width (s)

PDM

Duty Factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja=180

oC/W

t

T

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.02

0

4

8

12

0

0.5

1

1.5

2

2.5

3

Q G , Total Gate Charge (nC)

V DS =10V

V DS =12V

V DS =16V

I D =0.6A

10

100

13

57

9

11

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.1

1

0

0.2

0.4

0.6

0.8

V F , Forward Voltage Drop (V)

T j =1 25

o CT

j =25

o C

0.001

0.01

0.1

1

10

25

50

75

100

125

T j , Junction Temperature (

o C)

20V

16V

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AP6924GEY Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

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