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AP9926TGO Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP9926TGO Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
2 / 4 page Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V, ID=4A - - 32 mΩ VGS=2.5V, ID=2A - - 45 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance VDS=5V, ID=6A - 12 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=16V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=±12V - - ±100 nA Qg Total Gate Charge 2 ID=6A - 9 15 nC Qgs Gate-Source Charge VDS=16V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC td(on) Turn-on Delay Time 2 VDS=10V - 8 - ns tr Rise Time ID=1A - 10 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 16 - ns tf Fall Time RD=10Ω -7 - ns Ciss Input Capacitance VGS=0V - 550 880 pF Coss Output Capacitance VDS=20V - 120 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 94 - pF Rg Gate Resistance f=1.0MHz - 1.2 1.9 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time 2 IS=6A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad. AP9926TGO |
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