STD3055L2-60 datasheet(2/8 Pages) SAMHOP

Part #	STD3055L2-60

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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STU/D3055L2-60

ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)

=

Parameter

Symbol

Condition

Min Typ Max Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS 0V, ID 250uA

20

V

Zero Gate Voltage Drain Current

IDSS

VDS 16V, VGS 0V

1

uA

Gate-Body Leakage

IGSS

VGS 12V, VDS 0V

100

nA

ON CHARACTERISTICS

b

Gate Threshold Voltage

VGS(th)

VDS VGS, ID= 250uA

0.7

V

Drain-Source On-State Resistance

RDS(ON)

VGS 4.5V, ID 6.0A

65

VGS 2.5V, ID 5.2A

90

On-State Drain Current

ID(ON)

VDS= 5V, VGS= 4.5V

A

S

Forward Transconductance

FS

g

VDS 10V, ID 6.0A

DYNAMIC CHARACTERISTICS

c

Input Capacitance

CISS

CRSS

COSS

Output Capacitance

Reverse Transfer Capacitance

VDS=8V, VGS= 0V

f =1.0MHZ

P

F

P

F

P

F

SWITCHING CHARACTERISTICS

c

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

tD(ON)

t

tD(OFF)

t

VDD = 10V

ID = 1A

VGEN = 4.5V

RL= 10 ohm

RGEN= 6 ohm

ns

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

Qgd

VDS =10V, ID = 6A

VGS =10V

nC

C

Fall Time

2

m-ohm

VDS=10V,ID =6A,VGS=10V

VDS=10V,ID =6A,VGS=4.5V

nC

1.8

50

75

1.2

15

10

13.7

107

139

528

14.1

25.4

8.9

1.3

7.2

14.5

2.1

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STD3055L2-60 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

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