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APT31N60BCSG Datasheet(PDF) 4 Page - Advanced Power Technology

Part # APT31N60BCSG
Description  Super Junction MOSFET
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT31N60BCSG Datasheet(HTML) 4 Page - Advanced Power Technology

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background image
APT31N60B_SCS(G)
Scope pics are placed with the place command
and then scaled to 50%
Scope pics are placed with the place command
and then scaled to 50%
T
C =+25°C
T
J =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
C
rss
C
iss
C
oss
93
50
10
5
1
.1
16
14
12
10
8
6
4
2
0
204
104
103
102
101
100
200
100
10
1
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100µS
1mS
10mS
E
on
E
off
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
T
J =+150°C
T
J =+25°C
ID = 18A
t
d(on)
t
d(off)
VDD = 400V
RG = 4.3Ω
TJ = 125°C
L = 100µH
VDD = 400V
RG = 4.3Ω
TJ = 125°C
L = 100µH
Eon includes
diode reverse recovery.
VDD = 400V
RG = 4.3Ω
TJ = 125°C
L = 100µH
t
r
t
f
0
5
10
15
20
25
30
0
5
10
15
20
25
30
0
5
10
15
20
25
30
0
5
10 15 20 25 30 35 40 45 50
1
10
100
600
0
50
100
150
200
0 10 20 30 40 50 60 70 80 90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
DS=300V
V
DS=120V
V
DS=480V
180
160
140
120
100
80
60
40
20
0
500
400
300
200
100
0
E
on
E
off
45
40
35
30
25
20
15
10
5
0
400
350
300
250
200
150
100
50
0
VDD = 400V
ID = 18A
TJ = 125°C
L = 100µH
Eon includes
diode reverse recovery.


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