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APT35GP120J Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT35GP120J Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page  SOT-227 G E E C ISOTOP® "UL Recognized" APT35GP120J 1200V The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 50 kHz operation @ 800V, 14A • Low Gate Charge • 20 kHz operation @ 800V, 25A • Ultrafast Tail Current shutoff • RBSOA rated MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com STATIC ELECTRICAL CHARACTERISTICS MIN TYP MAX 1200 3 4.5 6 3.3 3.9 3 250 2500 ±100 Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Symbol BVCES VGE(TH) VCE(ON) ICES IGES UNIT Volts µA nA Symbol VCES VGE VGEM IC1 IC2 ICM RBSOA PD TJ,TSTG TL APT35GP120J 1200 ±20 ±30 64 29 140 140A @ 960V 284 -55 to 150 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. G C E POWER MOS 7 ® IGBT |
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