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APT47N60SC3 Datasheet(PDF) 2 Page - Advanced Power Technology |
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APT47N60SC3 Datasheet(HTML) 2 Page - Advanced Power Technology |
2 / 5 page DYNAMIC CHARACTERISTICS APT47N60BC3_SC3 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC t1 t2 SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULARPULSEDURATION(SECONDS) FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 UNIT Amps Volts ns µC V/ns MIN TYP MAX 47 141 1.2 580 23 6 Symbol R θJC R θJA MIN TYP MAX 0.30 62 UNIT °C/W Characteristic Junction to Case Junction to Ambient Symbol I S I SM V SD t rr Q rr dv/dt Symbol C iss C oss C rss Q g Q gs Q gd t d(on) t r t d(off) t f E on E off E on E off Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 300V I D = 47A @ 25°C RESISTIVESWITCHING V GS = 13V V DD = 380V I D = 47A @ 125°C R G = 1.8Ω INDUCTIVE SWITCHING @ 25°C V DD = 400V, VGS = 15V I D = 47A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C V DD = 400V VGS = 15V I D = 47A, RG = 5Ω MIN TYP MAX 7015 2565 210 260 29 110 18 27 110 8 670 980 1100 1200 UNIT pF nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMALCHARACTERISTICS 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A 5 dv /dt numbers reflect the limitations of the test circuit rather than the device itself. I S ≤ -ID47A di/dt ≤ 700A/µs V R ≤ VDSS T J ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as P AV=EAR*f APT Reserves the right to change, without notice, the specifications and information contained herein. Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (V GS = 0V, IS = -47A) Reverse Recovery Time (I S = -47A, dlS/dt = 100A/µs, VR = 350V) Reverse Recovery Charge (I S = -47A, dlS/dt = 100A/µs, VR = 350V) Peak Diode Recovery dv/dt 5 |
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