APT80GP60JDQ3 datasheet(3/9 Pages) ADPOW

Part #	APT80GP60JDQ3

Description	POWER MOS 7 IGBT

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Manufacturer	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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APT80GP60JDQ3

TYPICAL PERFORMANCE CURVES

250µs PULSE

TEST<0.5 % DUTY

CYCLE

120

100

80

60

40

20

0

500

400

300

200

100

0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0

0.5

1.0

1.5

2.0

2.5

3.0

0

0.5

1.0

1.5

2.0

2.5

3.0

0

1

2

3

4

5

6

7

8

9 10

0

50

100

150

200

250

300

6

8

10

12

14

16

-50

-25

0

25

50

75

100 125

-50

-25

0

25

50

75

100 125

-50 -25

0

25

50

75 100 125 150

120

100

80

60

40

20

0

16

14

12

10

8

6

4

2

0

3.0

2.5

2.0

1.5

1.0

0.5

0

200

180

160

140

120

100

80

60

40

20

0

V

CE, COLLECTER-TO-EMITTER VOLTAGE (V)

V

CE, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(TJ = 25°C)

FIGURE 2, Output Characteristics (TJ = 125°C)

V

GE, GATE-TO-EMITTER VOLTAGE (V)

GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics

FIGURE 4, Gate Charge

VGE, GATE-TO-EMITTER VOLTAGE (V)

TJ, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage

FIGURE 6, On State Voltage vs Junction Temperature

TJ, JUNCTION TEMPERATURE (°C)

TC, CASE TEMPERATURE (°C)

FIGURE 7, Breakdown Voltage vs. Junction Temperature

FIGURE 8, DC Collector Current vs Case Temperature

T

J = 125°C

T

J = 25°C

T

J = -55°C

V

GE = 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

T

J = 125°C

T

J = 25°C

T

J = -55°C

T

J = 125°C

T

J = 25°C

T

J = -55°C

V

CE = 480V

IC = 80A

TJ = 25°C

V

CE = 120V

V

CE = 300V

T

J = 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

I

C = 160A

I

C = 80A

I

C = 40A

I

C = 160A

I

C = 80A

I

C = 40A

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APT80GP60JDQ3 Datasheet(PDF) 3 Page - Advanced Power Technology

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