Electronic Components Datasheet Search |
|
APTM50AM38FT Datasheet(PDF) 2 Page - Advanced Power Technology |
|
APTM50AM38FT Datasheet(HTML) 2 Page - Advanced Power Technology |
2 / 6 page APTM50AM38FT APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 375µA 500 V VGS = 0V,VDS = 500V Tj = 25°C 375 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 400V Tj = 125°C 1500 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 45A 38 m W VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 11.2 Coss Output Capacitance 2.4 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.18 nF Qg Total gate Charge 246 Qgs Gate – Source Charge 66 Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 90A 130 nC Td(on) Turn-on Delay Time 18 Tr Rise Time 35 Td(off) Turn-off Delay Time 87 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 90A RG = 2 W 77 ns Eon Turn-on Switching Energy u 1510 Eoff Turn-off Switching Energy v Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 90A, RG = 2Ω 1452 µJ Eon Turn-on Switching Energy u 2482 Eoff Turn-off Switching Energy v Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 90A, RG = 2Ω 1692 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 90 IS Continuous Source current (Body diode) Tc = 80°C 67 A VSD Diode Forward Voltage VGS = 0V, IS = - 90A 1.3 V dv/dt Peak Diode Recovery w 15 V/ns Tj = 25°C 233 trr Reverse Recovery Time IS = - 90A VR = 250V diS/dt = 200A/µs Tj = 125°C 499 ns Tj = 25°C 3.8 Qrr Reverse Recovery Charge IS = - 90A VR = 250V diS/dt = 200A/µs Tj = 125°C 11.4 µC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS £ - 90A di/dt £ 700A/µs VR £ VDSS Tj £ 150°C |
Similar Part No. - APTM50AM38FT |
|
Similar Description - APTM50AM38FT |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |