APTM50DAM38CT datasheet(2/7 Pages) ADPOW

Part #	APTM50DAM38CT

Description	Boost chopper SiC FWD diode MOSFET Power Module

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Manufacturer	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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APTM50DAM38CT

APT website – http://www.advancedpower.com

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

BVDSS

Drain - Source Breakdown Voltage

VGS = 0V, ID = 375µA

500

V

VGS = 0V,VDS = 500V

Tj = 25°C

150

IDSS

Zero Gate Voltage Drain Current

VGS = 0V,VDS = 400V

Tj = 125°C

750

µA

RDS(on)

Drain – Source on Resistance

VGS = 10V, ID = 45A

38

m

W

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 5mA

3

5

V

IGSS

Gate – Source Leakage Current

VGS = ±30 V, VDS = 0V

±150

nA

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

11.2

Coss

Output Capacitance

2.36

Crss

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz

0.18

nF

Qg

Total gate Charge

246

Qgs

Gate – Source Charge

66

Qgd

Gate – Drain Charge

VGS = 10V

VBus = 250V

ID = 90A

130

nC

Td(on)

Turn-on Delay Time

18

Tr

Rise Time

35

Td(off)

Turn-off Delay Time

87

Tf

Fall Time

Inductive switching @ 125°C

VGS = 15V

VBus = 333V

ID = 90A

RG = 2

W

77

ns

Eon

Turn-on Switching Energy

906

Eoff

Turn-off Switching Energy

u

Inductive switching @ 25°C

VGS = 15V, VBus = 333V

ID = 90A, RG = 2Ω

1452

µJ

Eon

Turn-on Switching Energy

1490

Eoff

Turn-off Switching Energy

u

Inductive switching @ 125°C

VGS = 15V, VBus = 333V

ID = 90A, RG = 2Ω

1692

µJ

u In accordance with JEDEC standard JESD24-1.

Diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

IF(AV)

Maximum Average Forward Current

50% duty cycle

Tc = 125°C

60

A

Tj = 25°C

1.6

1.8

VF

Diode Forward Voltage

IF = 60A

Tj = 175°C

2.0

2.4

V

QC

Total Capacitive Charge

IF = 60A, VR = 300V

di/dt =1600A/µs

84

nC

f = 1MHz, VR = 200V

390

Q

Total Capacitance

f = 1MHz, VR = 400V

300

pF

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