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APTGT30H60T3 Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTGT30H60T3 Datasheet(HTML) 2 Page - Advanced Power Technology |
2 / 5 page APTGT30H60T3 APT website – http://www.advancedpower.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 250 µA Tj = 25°C 1.5 1.9 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 30A Tj = 150°C 1.7 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 400µA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 300 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 1600 Coes Output Capacitance 110 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 50 pF Td(on) Turn-on Delay Time 110 Tr Rise Time 45 Td(off) Turn-off Delay Time 200 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 30A RG = 15Ω 40 ns Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 250 Tf Fall Time 60 ns Eon Turn-on Switching Energy 0.53 Eoff Turn-off Switching Energy Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 30A RG = 15Ω 1.05 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR=600V Tj = 150°C 500 µA IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 80°C 30 A Tj = 25°C 1.6 2 VF Diode Forward Voltage IF = 30A VGE = 0V Tj = 150°C 1.5 V Tj = 25°C 120 trr Reverse Recovery Time Tj = 150°C 210 ns Tj = 25°C 1.5 Qrr Reverse Recovery Charge IF = 30A VR = 300V di/dt =1800A/µs Tj = 150°C 3.1 µC |
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