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AN207 Datasheet(PDF) 2 Page - Vishay Siliconix |
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AN207 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 12 page AN207 Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 6-2 Document Number: 70605 03-Aug-99 FIGURE 2. Typical Channel Block Diagram V+ VL IN Input Logic Driver V– Level Translator DMOS Switch V– D S The level translator provides level shifting of the 0 to 5 V logic input to the V+ to V– voltage excursions needed to control the MOSFET switch. The driver stage acts as a buffer and provides current amplification to quickly charge/discharge the MOSFET gate, thus quickly turning the switch ON or OFF. The switching element is an n-channel double-diffused enhancement-mode MOSFET. DMOS FETs achieve very low inter-electrode capacitance and high speed, thanks to their lateral construction. To turn the switch ON, a voltage equal to V+ is applied to the FET’s gate. This enhances the channel into conduction. The source and Drain terminals can stand up to 16 V with respect to the substrate voltage (V–). ESD protection diode pairs are connected from each logic input, source, and drain pin to the V+ and V- power supply rails. Optimized Characteristics The DG611 family was designed to optimize the parameters which are most important in high-speed applications. Switching Speed Discrete DMOS FETs such as the SD210 or SD5000 are well known for their fast switching speeds. In fact, both specify a td(on) of 1 ns max. The DG611 family combines fast DMOS switching elements with a low-power CMOS driver. These devices are so fast that measuring their speed at final test becomes a challenge. ATE limitations (lead inductances/capacitances, generator’s rise and fall times) conspire to slow things down. This is why the tON/tOFF specifications on the data sheet are so loose (35 ns max). A typical device in a typical application is much faster than the data-sheet specifications would indicate. A bench test circuit reduced test fixture parasitics, while a low capacitance (3 pF) FET probe was used to monitor the output voltage. Figure 3 shows that before the output starts to change there was a propagation delay through the driver of about 8 ns. Once the FET starts to turn on, the output voltage rises very fast. The rise time was approximately 2 ns. Total tON (50% Vin to 90% Vout) was approximately 12 ns. Similarly at turn-off the driver’s propagation delay appeared to be about 8 ns, the fall time was about 5 ns. tOFF (50% VIN to 90% VOUT) was about 7 ns. Reduced Switching Transients By adding two dynamic compensation capacitors to the output driver stage, charge injection glitches have been virtually eliminated. For comparison purposes, Figure 4 illustrates the typical charge injection characteristics for two Vishay Siliconix’ high-speed analog switches: DG271 and DG611. Note how flat the DG611 characteristic is. This guarantees low charge injection regardless of analog signal voltage. Charge injection causes switching glitches both at turn-on and at turn-off times. To evaluate and compare the switching glitches produced by the DG611, the test circuit of Figure 5 was built. A 4-Vp-p triangular bipolar wave form was fed to the switch input. On this wave form we wanted to cut some 0-V notches as commanded by a pulse train. 100-ns pulses were used to interrupt signal flow twice in every period letting the output voltage to fall to 0 V. |
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Similar Description - AN207 |
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