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IRGI4065PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGI4065PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRGI4065PbF 2 www.irf.com Notes: Half sine wave with duty cycle = 0.10, ton=2µsec. Rθ is measured at TJ of approximately 90°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVCES Collector-to-Emitter Breakdown Voltage 300 ––– ––– V V(BR)ECS Emitter-to-Collector Breakdown Voltage e 18 ––– ––– V ∆ΒVCES/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C ––– 1.05 ––– V ––– 1.25 1.45 V ––– 1.75 ––– V ––– 2.25 ––– ––– 2.75 ––– V VGE(th) Gate Threshold Voltage 2.6 ––– 5.0 V ∆VGE(th)/∆TJ Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C ICES Collector-to-Emitter Leakage Current ––– 2.0 25 µA ––– 50 ––– IGES Gate-to-Emitter Forward Leakage ––– ––– 100 nA Gate-to-Emitter Reverse Leakage ––– ––– -100 gfe Forward Transconductance ––– 26 ––– S Qg Total Gate Charge ––– 62 ––– nC Qgc Gate-to-Collector Charge ––– 20 ––– tst Shoot Through Blocking Time 100 ––– ––– ns EPULSE Energy per Pulse µJ Ciss Input Capacitance ––– 2200 ––– Coss Output Capacitance ––– 110 ––– pF Crss Reverse Transfer Capacitance ––– 55 ––– LC Internal Collector Inductance ––– 5.0 ––– Between lead, nH 6mm (0.25in.) LE Internal Emitter Inductance ––– 13 ––– from package VGE = 15V, ICE = 110A e Static Collector-to-Emitter Voltage VCE(on) VGE = 15V, ICE = 110A, TJ = 150°C e ––– 875 ––– VGE = 30V VGE = -30V VCE = VGE, ICE = 0.5mA VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150°C ––– 975 ––– VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15V e VCC = 240V, VGE = 15V, RG= 5.1Ω VCC = 240V, RG= 5.1Ω, TJ = 25°C ƒ = 1.0MHz, See Fig.13 and center of die contact Conditions VGE = 0V, ICE = 1 mA Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 70A e VGE = 15V, ICE = 15A e VGE = 15V, ICE = 28A e VGE = 0V, ICE = 1 A VCE = 30V VGE = 0V L = 220nH, C= 0.40µF, VGE = 15V L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 100°C |
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