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IS42S32400B-7BLI Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc

Part # IS42S32400B-7BLI
Description  4Meg x 32 128-MBIT SYNCHRONOUS DRAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS42S32400B-7BLI Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
PRELIMINARYINFORMATION
Rev. 00G
06/15/06
ISSI®
IS42S32400B
PIN FUNCTIONS
Symbol
Type
Function (In Detail)
A0-A11
Input Pin
Address Inputs: A0-A11 are sampled during the ACTIVE
command (row-address A0-A11) and READ/WRITE command (column address A0-
A7), with A10 defining auto precharge) to select one location out of the memory array in
the respective bank. A10 is sampled during a PRECHARGE command to determine if
all banks are to be precharged (A10 HIGH) or bank selected by
BA0, BA1 (LOW). The address inputs also provide the op-code during a LOAD MODE
REGISTER command.
BA0, BA1
Input Pin
Bank Select Address: BA0 and BA1 defines which bank the ACTIVE, READ, WRITE or
PRECHARGE command is being applied.
CAS
Input Pin
CAS, in conjunction with the RAS and WE, forms the device command. See the
"Command Truth Table" for details on device commands.
CKE
Input Pin
The CKE input determines whether the CLK input is enabled. The next rising edge of the
CLK signal will be valid when is CKE HIGH and invalid when LOW. When CKE is LOW,
the device will be in either power-down mode, clock suspend mode, or self refresh
mode. CKE is an asynchronous input.
CLK
Input Pin
CLK is the master clock input for this device. Except for CKE, all inputs to this device
are acquired in synchronization with the rising edge of this pin.
CS
Input Pin
The
CSinput determines whether command input is enabled within the device.
Command input is enabled when
CS is LOW, and disabled with CS is HIGH. The device
remains in the previous state when
CS is HIGH.
DQM0-DQM3
Input Pin
DQM0 - DQM3 control the four bytes of the I/O buffers (DQ0-DQ31). In read
mode, DQMn control the output buffer. When DQMn is LOW, the corresponding buffer
byte is enabled, and when HIGH, disabled. The outputs go to the HIGH impedance
state whenDQMn is HIGH. This function corresponds to
OE in conventional DRAMs. In
write mode, DQMn control the input buffer. When DQMn is LOW, the corresponding
buffer byte is enabled, and data can be written to the device. When DQMn is HIGH,
input data is masked and cannot be written to the device.
DQ0-DQ31
Input/Output Pin
Data on the Data Bus is latched on these pins during Write commands, and buffered
after Read commands.
RAS
Input Pin
RAS, in conjunction with CAS and WE, forms the device command. See the "Command
Truth Table" item for details on device commands.
WE
Input Pin
WE, in conjunction with RAS and CAS, forms the device command. See the "Command
Truth Table" item for details on device commands.
VDDQ
Power Supply Pin
VDDQ is the output buffer power supply.
VDD
Power Supply Pin
VDD is the device internal power supply.
VSSQ
Power Supply Pin
VSSQ is the output buffer ground.
VSS
Power Supply Pin
VSS is the device internal ground.


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