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Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
Figure 1 – RDSON vs Gate Current at ID – 10A
Figure 2 – Gate Charge for VDS = 0.1V
Figure 3 – Breakdown Voltage Vds vs Id
Figure 4 – Capacitance vs Drain Voltage Vds
0
5
10
15
20
25
30
35
40
45
50
0
5
1 0
1 5
20
25
30
VD S (V )
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.00
0.20
0.40
0.60
0.80
VGS(V)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.00
0.20
0.40
0.60
0.80
VGS(V)
0
1
2
3
4
5
6
7
8
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
IG(A)
0
1
2
3
4
5
6
7
8
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
IG(A)
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
0
5
10
15
20
Qg (nC)
Capacitance vs. Vds, Vgs=-5v; DPAK, 25'C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
5
10
15
20
25
Vds (volts)
Ciss
Coss
Crss
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
-10
-8-6
-4-2
0
VG (V)
V
DS=12V
V
DS=0.1V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
-10
-8-6
-4-2
0
VG (V)
V
DS=12V
V
DS=0.1V
Figure 5 – IG vs Gate Voltage VGS
Figure 6 – Transfer Characteristic
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1010DA
Product Specification
3
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