APM2701CGC-TR datasheet(3/13 Pages) ANPEC

Part #	APM2701CGC-TR

Description	Dual Enhancement Mode MOSFET (N and P-Channel)

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Manufacturer	ANPEC [Anpec Electronics Coropration]

Direct Link	http://www.anpec.com.tw

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3 / 13 page

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Rev. A.1 - Jun., 2006

www.anpec.com.tw

3

APM2701CG

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics (Cont.)

ISD=0.5A, VGS=0V

N-Ch

0.7

1.3

VSD

a

Diode Forward Voltage

ISD=-0.5A, VGS=0V

P-Ch

-0.7

-1.3

V

Dynamic Characteristics

b

N-Ch

270

Ciss

Input Capacitance

P-Ch

300

N-Ch

70

Coss

Output Capacitance

P-Ch

50

N-Ch

50

Crss

Reverse Transfer

Capacitance

N-Channel

VGS=0V,

VDS=10V,

Frequency=1.0MHz

P-Channel

VGS=0V,

VDS=-10V,

Frequency=1.0MHz

P-Ch

30

pF

N-Ch

6

12

td(ON)

Turn-on Delay Time

P-Ch

6

10

N-Ch

5

10

Tr

Turn-on Rise Time

P-Ch

8

12

N-Ch

12

23

td(OFF)

Turn-off Delay Time

P-Ch

10

15

N-Ch

6

12

Tf

Turn-off Fall Time

N-Channel

VDD=10V, RL=10

Ω,

IDS=1A, VGEN=4.5V,

RG=6

Ω

P-Channel

VDD=-10V, RL=10

Ω,

IDS=-1A, VGEN=-4.5V,

RG=6

Ω

P-Ch

5

10

ns

Gate Charge Characteristics

b

N-Ch

5

6.5

Qg

Total Gate Charge

P-Ch

4

6

N-Ch

0.5

Qgs

Gate-Source Charge

P-Ch

0.6

N-Ch

1.6

Qgd

Gate-Drain Charge

N-Channel

VDS=10V, VGS=4.5V,

IDS=3A

P-Channel

VDS=-10V, VGS=-4.5V,

IDS=-1.5A

P-Ch

1

nC

Notes:

a : Pulse test ; pulse width

≤300µs, duty cycle ≤ 2%.

b : Guaranteed by design, not subject to production testing.

Electrical Characteristics (Cont.) (T

A = 25°C unless otherwise noted)

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