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APM2801B Datasheet(PDF) 4 Page - Anpec Electronics Coropration

Part # APM2801B
Description  P-Channel Enhancement Mode MOSFET with Schottky Diode
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Manufacturer  ANPEC [Anpec Electronics Coropration]
Direct Link  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM2801B Datasheet(HTML) 4 Page - Anpec Electronics Coropration

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Copyright
© ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
www.anpec.com.tw
4
APM2801B
1E-4
1E-3
0.01
0.1
1
10 30
0.01
0.1
1
2
Mounted on 1in
2 pad
R
θJA
: 150
oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Typical Characteristics
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
-VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
Tj - Junction Temperature (°C)
0
20
40
60
80
100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
0.01
0.1
1
10
100
0.01
0.1
1
10
20
1s
T
A
=25
oC
10ms
300
µs
1ms
100ms
DC
P-Channel MOSFET


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