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APM4536KC-TRL Datasheet(PDF) 3 Page - Anpec Electronics Coropration

Part # APM4536KC-TRL
Description  Dual Enhancement Mode MOSFET (N-and P-Channel)
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Manufacturer  ANPEC [Anpec Electronics Coropration]
Direct Link  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM4536KC-TRL Datasheet(HTML) 3 Page - Anpec Electronics Coropration

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Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
3
APM4536K
Electrical Characteristics (Cont.) (T
A = 25°C unless otherwise noted)
APM4536K
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Diode Characteristics
ISD=1.7A , VGS=0V
N-Ch
0.8
1.3
VSD
a
Diode Forward Voltage
ISD=-1.7A , VGS=0V
P-Ch
-0.8
-1.3
V
Dynamic Characteristics
b
N-Ch
3
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
P-Ch
12
Ω
N-Ch
360
Ciss
Input Capacitance
P-Ch
650
N-Ch
75
Coss
Output Capacitance
P-Ch
145
N-Ch
35
Crss
Reverse Transfer
Capacitance
N-Channel
VGS=0V,
VDS=25V,
Frequency=1.0MHz
P-Channel
VGS=0V,
VDS=-25V,
Frequency=1.0MHz
P-Ch
80
pF
N-Ch
10
15
td(ON)
Turn-on Delay Time
P-Ch
10
20
N-Ch
8
20
Tr
Turn-on Rise Time
P-Ch
15
30
N-Ch
20
28
td(OFF)
Turn-off Delay Time
P-Ch
25
50
N-Ch
5
15
Tf
Turn-off Fall Time
N-Channel
VDD=15V, RL=15
Ω,
IDS=1A, VGEN=10V,
RG=6
Ω
P-Channel
VDD=-15V, RL=15
Ω,
IDS=-1A, VGEN=-10V,
RG=6
Ω
P-Ch
15
30
ns
Gate Charge Characteristics
b
N-Ch
14.5
20
Qg
Total Gate Charge
P-Ch
26
35
N-Ch
4.3
Qgs
Gate-Source Charge
P-Ch
5.1
N-Ch
2.3
Qgd
Gate-Drain Charge
N-Channel
VDS=15V, VGS=10V,
IDS=5A
P-Channel
VDS=-15V, VGS=-10V,
IDS=-5A
P-Ch
3.3
nC
Notes:
a : Pulse test ; pulse width
≤300
µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.


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