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AS1502-TZ Datasheet(PDF) 3 Page - ams AG |
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AS1502-TZ Datasheet(HTML) 3 Page - ams AG |
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3 / 8 page  Data Sheet AS1500/1/2/3 Revision 1.0, Oct 2004 Page 3 of 8 AS1500 / AS1501 – SPECIFICATIONS VDD = 3V±10% or 5V±10%, VA = VDD, VB = 0V, –40°C ≤ TA ≤ +125°C unless otherwise noted. ELECTRICAL CHARACTERISTICS – 10k and 20k VERSIONS Parameter Symbol Conditions Min Typ3 Max Unit DC CHARACTERISTICS RHEOSTAT MODE TA = 25°C, VDD = 5V, AS1500, Version: 10k Ω 810 12 k Ω Nominal Resistance4 RAB TA = 25°C, VDD = 5V, AS1501, Version: 20k Ω 16 20 24 k Ω Resistance Tempco5 ∆RAB/∆T VAB = VDD, Wiper = No Connect 500 ppm/°C Wiper Resistance RW VDD = 5V 20 100 200 Ω Resistor Differential NL6 R-DNL RWB, VDD = 5V, VA = No Connect –1 ±1/4 +1 LSB Resistor Integral NL R-INL RWB, VDD = 5V, VA = No Connect –2 ±1/2 +2 LSB DC CHARACTERISTICS POTENTIOMETER DIVIDER Resolution N 8 Bits VDD = 5.5V TA = 25°C –2 ±1/2 +2 LSB Integral Nonlinearity INL VDD = 2.7V TA = 25°C –2 ±1/2 +2 LSB VDD = 5.5V TA = 25°C –1 ±1/4 +1 LSB Differential Nonlinearity DNL VDD = 2.7V TA = 25°C –1 ±1/4 +1 LSB Voltage Divider Tempco ∆VW /∆T Code = 80H 15 ppm/°C Full-Scale Error VWFSE Code = FFH, VDD = 5.5V –4 –2.8 0 LSB Zero-Scale Error VWZSE Code = 00H, VDD = 5.5V 0 1.3 2 LSB RESISTOR TERMINALS Voltage Range7 VA, B, W 0VDD V Capacitance8 Ax, Bx CA, B f =1MHz, Measured to GND, Code = 80H 75 pF Capacitance Wx CW f =1MHz, Measured to GND, Code = 80H 120 pF DIGITAL INPUTS AND OUTPUTS Input Logic High VIH VDD = 5V 2.4 V Input Logic Low VIL VDD = 5V 0.8 V Input Logic High VIH VDD = 3V 2.1 V Input Logic Low VIL VDD = 3V 0.6 V Input Current IIH, IIL VIN = 5V or 0V, VDD = 5V ±1 µA Input Capacitance CIL 5pF POWER SUPPLIES Power Supply Range VDD 2.7 5.5 V Supply Current (CMOS) IDD VIH = VDD or VIL = 0V, VDD = 5.5V 0.1 1 µA Supply Current (TTL)9 IDD VIH = 2.4V or 0.8V, VDD = 5.5V 0.9 4 mA Power Dissipation (CMOS)10 PDISS VIH = VDD or VIL = 0V, VDD = 5.5V 27.5 µW AS1500, Version: 10k Ω -54 -25 dB Power Supply Suppression Ratio PSSR VDD = 5V + 0.5VP sine wave @ 1kHz AS1501, Version: 20k Ω -52 -25 dB DYNAMIC CHARACTERISTICS11 BW_10k RWB = 10kΩ, VDD = 5V 1000 kHz Bandwidth –3dB Bandwidth –3dB BW_20k RWB = 20kΩ, VDD = 5V 500 kHz Total Harmonic Distortion THDW VA = 1VRMS + 2VDC, VB = 2VDC, f = 1kHz 0.003 % tS_10k RWB = 5k Ω, VA = VDD, VB = 0V, ±1% Error Band 2µs VW Settling Time tS_20k RWB = 10k Ω, VA = VDD, VB = 0V, ±1% Error Band 4µs eNWB_10k RWB = 5kΩ, f =1kHz 9 nV/ √ Hz Resistor Noise Voltage eNWB_20k RWB = 10kΩ, f =1kHz 13 nV/ √ Hz Table 3: Electrical Characteristics – 10k and 20k Versions 3 Typicals represent average readings at 25°C and VDD = 5V. 4 Wiper is not connected. IAB = 350µA for the 10kΩ version and 175µA for the 20kΩ version. 5 All Tempcos are guaranteed by design and not subject to production test. 6 Terminal A is not connected. IW = 350µA for the 10kΩ version and 175µA for the 20kΩ version. 7 Resistor terminals A, B, W have no limitations on polarity with respect to each other. 8 All capacitances are guaranteed by design and not subject to production test. Resistor-terminal capacitance tests are measured with 2.5V bias on the measured terminal. The remaining resistor terminals are left open circuit. 9 Worst-case supply current consumed when input logic level at 2.4V, standard characteristic of CMOS logic. 10 PDISS is calculated from (IDD×VDD). CMOS logic level inputs result in minimum power dissipation. 11 All dynamic characteristics are guaranteed by design and not subject to production test. All dynamic characteristics use VDD=5V. |
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